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WA310UFApplication Wafer Annealing System
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IGBT Wafer Annealing System ※ Ultra thin lGBT wafer annealing. ※ Achieve activation depth:>2um. ※ Sensitive areas no thermodamage. SiC Wafer Annealing system ※ SiC MOSFET ohmic contact formation. ※ Wafer surface no heat damge. ※ High quality flat-top line beam. |
